Highly individual SWCNTs for high performance thin film electronics

Authors/others:Kaskela, Antti (Aalto University); Laiho, Patrik (Aalto University); Fukaya, Norihiro (Nagoya University); Mustonen, Kimmo (Aalto University); Susi, Toma; Jiang, Hua (Aalto University); Houbenov, Nikolay (Aalto University); Ohno, Yutaka (Nagoya University); Kauppinen, Esko I. (Aalto University)

We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm2 V-1s-1 and ON/OFF-ratios up to 106.

Number of pages:7
Date of publication:1.7.2016
Journal title:Carbon
Peer reviewed:true
Digital Object Identifier (DOI):http://dx.doi.org/10.1016/j.carbon.2016.02.099
Publication Type:Article